Package-on-package structure having polymer-based material for warpage control

ABSTRACT

A package on package structure providing mechanical strength and warpage control includes a first package component, a second package component, and a first set of conductive elements coupling the first package component to the second package component. A first polymer-comprising material is molded on the first package component and surrounds the first set of conductive elements. The first polymer-comprising material has an opening therein exposing a top surface of the second package component. A third package component and a second set of conductive elements couples the second package component to the third package component.

BACKGROUND

Package-on-package (PoP) is becoming an increasingly popular integratedcircuit packaging technique because PoP allows for higher densityelectronics.

In a conventional package-on-package process, a first package componentsuch as an interposer is mounted onto a second package component such asa package substrate. A semiconductor chip may be mounted on theinterposer using flip-chip bonding. An underfill may be dispensed intothe gap between the semiconductor chip and the interposer to preventcracks from being formed in solder bumps or solder balls. Cracks aretypically caused by thermal stress and warpage. The thermal stress andwarpage are caused by thermal expansion mismatch between the componentsof a package-on-package structure. Even with the use of underfills andinterposers, the problem of warpage still cannot be entirely eliminated.

BRIEF DESCRIPTION OF DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart illustrating a method for fabricating asemiconductor device according to various aspects of the presentdisclosure.

FIGS. 2 through 5 c are cross-sectional views of intermediate stages inthe manufacture of a package-on-package structure in accordance withvarious embodiments of the present disclosure.

DETAILED DESCRIPTION

Various steps in the formation of package-on-package will be describedwith reference to FIGS. 2 through 5 c. It should be appreciated that thematerials, geometries, dimensions, structures, and process parametersdescribed herein are exemplary only, and are not intended to be, andshould not be construed to be, limiting to the invention claimed herein.Many alternatives and modifications will be apparent to those skilled inthe art, once informed by the present disclosure.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the present disclosure. Thus, theappearances of the phrases “in one embodiment” or “in an embodiment” invarious places throughout this specification are not necessarily allreferring to the same embodiment. Furthermore, the particular features,structures, or characteristics may be combined in any suitable manner inone or more embodiments. It should be appreciated that the followingfigures are not drawn to scale; rather, these figures are merelyintended for illustration.

FIG. 1 is a flowchart of a method 2 for fabricating a semiconductordevice according to various aspects of the present disclosure. Referringto FIG. 1, the method includes block 4, in which a first packagecomponent and a second package component are provided. The method 2includes block 6, in which the first package component is coupled to thesecond package component using a first set of conductive elements. Themethod 2 includes block 8, in which a first polymer-comprising materialis formed over the second package component, the firstpolymer-comprising material surrounds the first set of conductiveelements. The method 2 includes block 10, in which the firstpolymer-comprising material is cured to solidify the firstpolymer-comprising material. The method 2 includes block 12, in whichthe first polymer-comprising material is ground to level the firstpolymer-comprising material and expose a top surface of the secondpackage component. The method 2 includes block 14, in which a thirdpackage component is provided, and the second package component iscoupled to the third package component using a second set of conductiveelements.

It is understood that additional processes may be performed before,during, or after the blocks 4-14 shown in FIG. 1 to complete thefabrication of the semiconductor device, but these additional processesare not discussed herein in detail for the sake of simplicity.

FIGS. 2 through 5 c are cross-sectional views of intermediate stages inthe manufacture of a package-on-package structure in accordance withvarious embodiments of the method 2 of FIG. 1. It is understood thatFIGS. 2-5 c have been simplified for a better understanding of theinventive concepts of the present disclosure.

Referring to FIG. 2, a semiconductor device 5 is provided. In at leastone embodiment, semiconductor device 5 is a package-on-package structurehaving a first package component 10, a second package component 20, anda first set of conductive elements 30 for coupling the first packagecomponent 10 to the second package component 20. First package component10 may be a package substrate, and hence is alternatively referred to assubstrate 10 hereinafter, although it may be another type of packagecomponent that may comprise, for example a device die, an interposer,and/or other suitable package components. Substrate 10 may be formed ofa semiconductor material, such as silicon, silicon germanium, siliconcarbide, gallium arsenide, or other suitable semiconductor materials.Alternatively, substrate 10 may be formed of a dielectric material.

Second package component 20 may be an interposer, and hence isalternatively referred to as interposer 20 hereinafter. In someembodiments, second package component 20 may be a wafer, a device die, asubstrate, and/or the like. Interposer 20 may be composed of asemiconductor material such as silicon, germanium, or gallium arsenateand in at least one embodiment may have a thickness of about 20 micronsto about 500 microns. In addition to providing electrical connectionbetween a bottom package component and a top package component andthermal conduction, interposer 20 also provides mechanical stiffening toa resulting package. In this way, interposer 20 provides stiffness andresistance to warping that might otherwise occur as a result of thermalcoefficient of expansion (CTE) mismatch between the top packagecomponent and the bottom package component.

Substrate 10 is coupled to interposer 20 by the first set of conductiveelements 30. First set of conductive elements 30 may be solder balls,and hence is alternatively referred to as solder balls 30 hereinafter.Solder balls 30 formed on bond pads 40 act as the electrical connectorsfor bonding and electrically coupling substrate 10 to interposer 20.Although solder balls 30 are illustrated in FIG. 2, connection betweeninterposer 20 and substrate 10 could be made by way of solder bumps,copper pillars, conductive bumps, solder caps, conductive pillars,conductive balls, under-bump-metallurgies, and/or other connectorelements.

Next, as shown in FIG. 3, a first polymer-comprising material 50 a isapplied on the package-on-package structure shown in FIG. 2 to providemechanical stiffness and enhance the mechanical strength of theresulting package. It is believed that this mechanical stiffness reducesthe severity of warpages resulting from, e.g., thermal expansionmismatch between the components of the resulting package. In at leastone exemplary embodiment, first polymer-comprising material 50 acomprises a molding compound, and hence is referred to as first moldingcompound 50 a hereinafter, although it may also be formed of othermaterials such as an underfill, molding underfill (MUF), epoxy, or thelike. First molding compound 50 a may be molded over interposer 20 andbe contiguous with a top surface of substrate 10 and surround solderballs 30 using, for example, compressive molding or transfer molding tofully encapsulate interposer 20 in first molding compound 50 a. A curingstep is then performed to solidify first molding compound 50 a. Agrinding may thereafter be performed to remove portions of the firstmolding compound 50 a that are over a top surface 22 of interposer 20.The grinding is performed to level first molding compound 50 a andexpose top surface 22 of interposer 20 so that another package componentsuch as a die, for example, can be mounted onto top surface 22 ofinterposer 20.

Referring now to FIG. 4, a third package component 60 is mounted ontointerposer 20 using a second set of conductive elements 45. Thirdpackage component 60 may be a die, and hence is alternatively referredto as die 60 hereinafter. Die 60 may comprise a memory chip, a logicchip, a processor chip, and/or the like. Alternatively, die 60 may be apackage that comprises a device die, an interposer, a package substrate,and/or the like. Although FIG. 4 illustrates two die, this is forillustration only. A plurality of dies 60, which may be identical toeach other or different from each other, may be bonded to interposer 20.The bonding may be a flip-chip bonding, which is performed throughsecond set of conductive elements 45, which provide electricalconduction of signals and power to die 60. Second set of conductiveelements 45 may have various forms. In some embodiments, second set ofconductive elements 45 are solder bumps. In alternative embodiments,second set of conductive elements 45 may include solder balls,conductive bumps, copper pillars, conductive pillars, conductive balls,solder caps, under-bump-metallurgies, and/or other connector elements.

As was shown in FIG. 3, first molding compound 50 a was applied on thepackage-on-package structure of FIG. 2 to enhance the mechanicalstrength and stiffness of the package-on-package structure. In FIG. 5 b,an underfill 70 is dispensed into a gap between interposer 20 and die 60to reinforce the strength of second set of conductive elements 45 andtherefore the overall package-on-package structure 5. After thedispensing, underfill 70 is cured. To further enhance the package ofFIG. 5 b and control the warpage, in at least one embodiment, underfill70 is dispensed into a gap between substrate 10 and interposer 20 tosurround the first set of conductive elements 30. The underfill 70reinforces the strength of the first set of conductive elements 30whilst providing for a high thermal conductivity.

In another embodiment of the present disclosure, a secondpolymer-comprising material 50 b is applied on the package-on-packagestructure shown in FIG. 4-5 a to provide mechanical stiffness andenhance the mechanical strength of the resulting package. It is believedthat this mechanical stiffness reduces the severity of warpagesresulting from, e.g., thermal expansion mismatch between the componentsof the resulting package. In an exemplary embodiment, secondpolymer-comprising material 50 b comprises a molding compound, and henceis referred to as second molding compound 50 b hereinafter, although itmay also be formed of other materials such as an underfill, moldingunderfill (MUF), epoxy, or the like. Second molding compound 50 b may bemolded over die 60 and be contiguous with a top surface of interposer 20and surround second set of conductive elements 45 using, for example,compressive molding or transfer molding to fully encapsulate die 60 insecond molding compound 50 b. A curing step is then performed tosolidify second molding compound 50 b. A grinding may thereafter beperformed to remove portions of the second molding compound 50 b thatare over a top surface of die 60. The grinding is performed to levelsecond molding compound 50 b and expose a top surface of die 60. Theresulting structure is shown in FIG. 5 a.

To further enhance the package-on-package structure 5 of FIG. 5 a andcontrol the warpage, in at least one embodiment, underfill 70 isdispensed into the gap between substrate 10 and interposer 20 toreinforce the strength of the first set of conductive elements 30 whilstproviding for a high thermal conductivity.

In at least one embodiment as shown in FIG. 5 c, to further enhance thepackage-on-package structure 5 of FIG. 5 a and control the warpage,underfill 70 is dispensed into the gap between interposer 20 and die 60to reinforce the strength of second set of conductive elements 45 andthe resulting package. After the dispensing, underfill 70 is cured. Inat least one embodiment, to further strengthen the package structure 5of FIG. 5 c and control the warpage, underfill 70 is dispensed into thegap between substrate 10 and interposer 20 to reinforce the strength ofthe first set of conductive elements 30.

Advantages of one or more embodiments of the present disclosure mayinclude one or more of the following.

In one or more embodiments, a package-on-package structure provides forimproved mechanical strength and mechanical stiffness by theintroduction of a molding compound in the package-on-package structure.It is believed that this mechanical stiffness reduces the severity ofwarpages resulting from, e.g., thermal expansion mismatch between thecomponents of the resulting package.

In one or more embodiments, a package-on-package structure provides forimproved warpage control by the introduction of a molding compound inthe package-on-package structure.

In one or more embodiments, the manufacturing costs are reduced formanufacturing a package-on-package structure having improved mechanicalstrength and warpage control.

The present disclosure has described various exemplary embodiments.According to one embodiment, a semiconductor device includes a firstpackage component, a second package component, and a first set ofconductive elements coupling the first package component to the secondpackage component. A first polymer-comprising material is molded on thefirst package component and surrounds the first set of conductiveelements. The first polymer-comprising material has an opening thereinexposing a top surface of the second package component. A third packagecomponent and a second set of conductive elements couples the secondpackage component to the third package component.

According to another embodiment, a semiconductor package includes afirst package and a second package having a first set of connectorelements for electrically coupling the second package to the firstpackage. The package also includes a third package having a second setof connector elements for electrically coupling the third package to thesecond package. A molding compound is molded on the first package andthe second package, wherein the molding compound surrounds the first setof connector elements and the second set of connector elements, andfurther wherein the molding compound has an opening therein exposing atop surface of the third package.

According to yet another embodiment, a method of forming a package,includes providing a first package component and a second packagecomponent. The first package component is coupled to the second packagecomponent using a first set of conductive elements. A firstpolymer-comprising material is formed over the second package componentand surrounds the first set of conductive elements. The firstpolymer-comprising material is cured to solidify the firstpolymer-comprising material. The first polymer-comprising material isground to level the first polymer-comprising material and expose a topsurface of the second package component. The method further includesproviding a third package component and coupling the second packagecomponent to the third package component using a second set ofconductive elements.

In the preceding detailed description, specific exemplary embodimentshave been described. It will, however, be apparent to a person ofordinary skill in the art that various modifications, structures,processes, and changes may be made thereto without departing from thebroader spirit and scope of the present disclosure. The specificationand drawings are, accordingly, to be regarded as illustrative and notrestrictive. It is understood that embodiments of the present disclosureare capable of using various other combinations and environments and arecapable of changes or modifications within the scope of the claims.

1. A semiconductor device, comprising: a first package component; asecond package component; a first set of conductive elements couplingthe first package component to the second package component; a firstpolymer-comprising material molded on the first package component andsurrounding the first set of conductive elements, the firstpolymer-comprising material having an opening therein exposing a topsurface of the second package component; a third package component; anda second set of conductive elements coupling the second packagecomponent to the third package component.
 2. The semiconductor device ofclaim 1, further comprising a second polymer-comprising material moldedon the second package component and surrounding the second set ofconductive elements, the second polymer-comprising material having anopening therein exposing a top surface of the third package component.3. The semiconductor device of claim 2, further comprising underfillsurrounding the first set of conductive elements.
 4. The semiconductordevice of claim 1, further comprising underfill surrounding the secondset of conductive elements.
 5. The semiconductor device of claim 4,further comprising underfill surrounding the first set of conductiveelements.
 6. The semiconductor device of claim 4, further comprising asecond polymer-comprising material molded on the second packagecomponent, the second polymer-comprising material having an openingtherein exposing a top surface of the third package component.
 7. Thesemiconductor device of claim 6, further comprising underfillsurrounding the first set of conductive elements.
 8. The semiconductordevice of claim 1, wherein the second package component comprises aninterposer having a thickness ranging from about 20 microns to about 500microns.
 9. The semiconductor device of claim 1, wherein the firstpolymer-comprising material includes a material selected from the groupconsisting of an underfill, a molding compound, and a molding underfill.10. The semiconductor device of claim 1, wherein the third packagecomponent includes at least one device die.
 11. A semiconductor package,comprising: a first package; a second package; a first set of connectorelements for electrically coupling the second package to the firstpackage; a third package; a second set of connector elements forelectrically coupling the third package to the second package; and amolding compound molded on the first package and the second package,wherein the molding compound surrounding the first set of connectorelements and the second set of connector elements, and further whereinthe molding compound having an opening therein exposing a top surface ofthe third package.
 12. The semiconductor package of claim 11, furthercomprising underfill surrounding the first set of connector elements.13. The semiconductor package of claim 11, further comprising underfillsurrounding the second set of connector elements.
 14. The semiconductorpackage of claim 13, further comprising underfill surrounding the firstset of connector elements. 15-20. (canceled)
 21. A semiconductor device,comprising: a substrate; an interposer; a first set of conductiveelements electrically coupling the substrate to the interposer; a firstmolding material on the substrate and surrounding the first set ofconductive elements, the first molding material exposing a top surfaceof the interposer; at least one die; and a second set of conductiveelements electrically coupling the interposer to the at least one die.22. The semiconductor device of claim 21, wherein the interposer has athickness ranging from about 20 microns (μm) to about 500 μm.
 23. Thesemiconductor device of claim 21, further comprising a second moldingmaterial on the first molding material and surrounding the second set ofconductive elements, the second molding material exposing a top surfaceof the at least one die.
 24. The semiconductor device of claim 23,further comprising an underfill material between the second conductiveelements, wherein the second molding material surrounds the underfillmaterial.
 25. The semiconductor device of claim 21, wherein the at leastone die comprises a plurality of dies and one die of the plurality ofdies is different from another die of the plurality of dies.
 26. Thesemiconductor device of claim 21, further comprising: a second moldingmaterial on the first molding material and surrounding the second set ofconductive elements, the second molding material exposing a top surfaceof the at least one die; a first underfill material between the firstconductive elements, wherein the first molding material surrounds thefirst underfill material; and a second underfill material between thesecond conductive elements, wherein the second molding materialsurrounds the second underfill material.